Xiang, YangYangXiangGarcia Bardon, MarieMarieGarcia BardonKaczer, BenBenKaczerAlam, Md Nur KutubulMd Nur KutubulAlamRagnarsson, Lars-AkeLars-AkeRagnarssonGroeseneken, GuidoGuidoGroesenekenVan Houdt, JanJanVan Houdt2021-12-212021-12-062021-12-2120202380-9248WOS:000717011600019https://imec-publications.be/handle/20.500.12860/38550Implication of Channel Percolation in Ferroelectric FETs for Threshold Voltage Shift ModelingProceedings paper10.1109/IEDM13553.2020.9371907978-1-7281-8888-1WOS:000717011600019