Electron mobility calculations for Si, Ge and III-V inversion layers with HfO2

O'Regan, TerranceTerranceO'ReganFischetti, MassimoMassimoFischettiSoree, BartBartSoreeMagnus, WimWimMagnus2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12655Electron mobility calculations for Si, Ge and III-V inversion layers with HfO2Proceedings paper