A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers

Alam, M.A.M.A.AlamGreen, MartinMartinGreenHo, M.Y.M.Y.HoVandervorst, WilfriedWilfriedVandervorstBrijs, BertBertBrijsConard, ThierryThierryConardRäisänen, P.I.P.I.Räisänen2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/5940A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layersOral presentation