(Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devices

Loo, RogerRogerLooDelhougne, RomainRomainDelhougneMeunier-Beillard, PhilippePhilippeMeunier-BeillardCaymax, MattyMattyCaymaxVerheyen, PeterPeterVerheyenEneman, GeertGeertEnemanDe Wolf, IngridIngridDe WolfJanssens, TomTomJanssensBenedetti, AlessandroAlessandroBenedettiDe Meyer, KristinKristinDe MeyerVandervorst, WilfriedWilfriedVandervorstHeyns, MarcMarcHeyns2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9223(Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devicesProceedings paper