Atomic layer etching of amorphous silicon with selectivity towards MoS2 for novel MX2 heterostructure device concepts

Heyne, MarkusMarkusHeyneGoodyear, AndyAndyGoodyearde Marneffe, Jean-FrancoisJean-Francoisde MarneffeCooke, MikeMikeCookeNeyts, Erik C.Erik C.NeytsRadu, IulianaIulianaRaduDe Gendt, StefanStefanDe Gendt2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/28505Atomic layer etching of amorphous silicon with selectivity towards MoS2 for novel MX2 heterostructure device conceptsProceedings paperhttp://pesm-conference.org/index.php/program