Atomistic modeling of pocket dopant deactivation and its impact on Vth variation in scaled Si planar devices using an atomistic kinetic Monte Carlo approach

Noda, TaijiTaijiNodaVrancken, ChristaChristaVranckenVandervorst, WilfriedWilfriedVandervorstHoriguchi, NaotoNaotoHoriguchi2021-10-222021-10-2220150018-9383https://imec-publications.be/handle/20.500.12860/25695Atomistic modeling of pocket dopant deactivation and its impact on Vth variation in scaled Si planar devices using an atomistic kinetic Monte Carlo approachJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7101843