Impact of nitridation of SiO2 gate oxide on 1/f noise in 0.18μm CMOS

Da Rold, MartinaMartinaDa RoldSimoen, EddyEddySimoenBadenes, GonçalGonçalBadenesDecoutere, StefaanStefaanDecoutere2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4230Impact of nitridation of SiO2 gate oxide on 1/f noise in 0.18μm CMOSProceedings paper