Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

Hu, JieJieHuStoffels, SteveSteveStoffelsLenci, SilviaSilviaLenciYou, ShuzhenShuzhenYouBakeroot, BenoitBenoitBakerootRonchi, NicoloNicoloRonchiGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-232021-10-2320161862-6300https://imec-publications.be/handle/20.500.12860/26750Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layersJournal article10.1002/pssa.201532797