Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions

Van Beek, SimonSimonVan BeekMartens, KoenKoenMartensRoussel, PhilippePhilippeRousselDonadio, Gabriele LucaGabriele LucaDonadioSwerts, JohanJohanSwertsMertens, SofieSofieMertensKar, Gouri SankarGouri SankarKarMin, TaiTaiMinGroeseneken, GuidoGuidoGroeseneken2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/26033Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctionsProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7112818