Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Hu, JieJieHuLenci, SilviaSilviaLenciStoffels, SteveSteveStoffelsDe Jaeger, BriceBriceDe JaegerGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22507Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode regionMeeting abstract