Assessment of Transistor Aging Models in a 28nm CMOS Technology at a Wide Range of Stress Conditions

Sangani, DishantDishantSanganiDiaz Fortuny, JavierJavierDiaz FortunyBury, ErikErikBuryKaczer, BenBenKaczerGielen, G.G.Gielen2023-06-012023-05-262023-06-0120221930-8841WOS:000972934500015https://imec-publications.be/handle/20.500.12860/41648Assessment of Transistor Aging Models in a 28nm CMOS Technology at a Wide Range of Stress ConditionsProceedings paper10.1109/IIRW56459.2022.10032756978-1-6654-5368-4WOS:000972934500015