0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

Menou, NicolasNicolasMenouWang, Xin PengXin PengWangKaczer, BenBenKaczerPolspoel, WouterWouterPolspoelPopovici, Mihaela IoanaMihaela IoanaPopoviciOpsomer, KarlKarlOpsomerPawlak, MalgorzataMalgorzataPawlakKnaepen, W.W.KnaepenDetavernier, C.C.DetavernierBlomberg, T.T.BlombergPierreux, D.D.PierreuxSwerts, JohanJohanSwertsMaes, JanJanMaesFavia, PaolaPaolaFaviaBender, HugoHugoBenderBrijs, BertBertBrijsVandervorst, WilfriedWilfriedVandervorstVan Elshocht, SvenSvenVan ElshochtWouters, DirkDirkWoutersBiesemans, SergeSergeBiesemansKittl, JorgeJorgeKittl2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/141470.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applicationsProceedings paper