3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

Reaz, MahmudMahmudReazTonigan, Andrew M.Andrew M.ToniganLi, KanKanLiSmith, M. BrandonM. BrandonSmithRony, Mohammed W.Mohammed W.RonyGorchichko, MariiaMariiaGorchichkoO'Hara, AndrewAndrewO'HaraLinten, DimitriDimitriLintenMitard, JeromeJeromeMitardFang, JingtianJingtianFangZhang, En XiaEn XiaZhangAlles, Michael L.Michael L.AllesWeller, Robert A.Robert A.WellerFleetwood, Daniel M.Daniel M.FleetwoodReed, Robert A.Robert A.ReedFischetti, Massimo, VMassimo, VFischettiPantelides, Sokrates T.Sokrates T.PantelidesWeeden-Wright, Stephanie L.Stephanie L.Weeden-WrightSchrimpf, Ronald D.Ronald D.Schrimpf2022-04-282021-11-022022-04-012022-04-2820210018-9383WOS:000642766300062https://imec-publications.be/handle/20.500.12860/379833-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETsJournal article10.1109/TED.2021.3068328WOS:000642766300062FIELD-EFFECT TRANSISTORSTECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORSBACKSCATTERING COEFFICIENT EXTRACTIONRANGE COULOMB INTERACTIONSDRIFT-DIFFUSION MODELCARRIER DEGRADATIONPART IIDEFECT GENERATIONTRANSPORT MODELZINCBLENDE STRUCTURES