GaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTS

Silvestri, MarcoMarcoSilvestriMichael, UrenUrenMichaelMarcon, DenisDenisMarconKuball, MartinMartinKuball2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/23082GaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTSProceedings paper