A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 10^16 endurance at 85°C

Lu, ZhichaoZhichaoLuCollaert, NadineNadineCollaertAoulaiche, MarcMarcAoulaicheDe Wachter, BartBartDe WachterDe Keersgieter, AnAnDe KeersgieterSchwarzenbach, W.W.SchwarzenbachBonnin, O.O.BonninBourdelle, K.K.K.K.BourdelleNguyen, B.-Y.B.-Y.NguyenMazure, C.C.MazureAltimime, LaithLaithAltimimeJurczak, GosiaGosiaJurczak2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17537A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 10^16 endurance at 85°CProceedings paper