The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates

Buca, D.D.BucaMörschbächer, M.J.M.J.MörschbächerHolländer, B.B.HolländerLuysberg, M.M.LuysbergLoo, RogerRogerLooCaymax, MattyMattyCaymaxMantl, S.S.Mantl2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8647The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substratesProceedings paper