Low temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatment

Vohra, AnuragAnuragVohraPorret, ClémentClémentPorretKohen, DavidDavidKohenFolkersma, StevenStevenFolkersmaBogdanowicz, JanuszJanuszBogdanowiczSchaekers, MarcMarcSchaekersTolle, JohnJohnTolleHikavyy, AndriyAndriyHikavyyCapogreco, ElenaElenaCapogrecoWitters, LiesbethLiesbethWittersLanger, RobertRobertLangerVandervorst, WilfriedWilfriedVandervorstLoo, RogerRogerLoo2021-10-272021-10-272019-030021-4922https://imec-publications.be/handle/20.500.12860/34401Low temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatmentJournal articlehttps://iopscience.iop.org/article/10.7567/1347-4065/ab027b/meta