Automatic Prediction of Metal-Oxide-Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning Algorithm

Choi, SeoyeonSeoyeonChoiPark, Dong GeunDong GeunParkKim, Min JungMin JungKimBang, SeainSeainBangKim, JungchunJungchunKimJin, SeungheeSeungheeJinHuh, Ki SeokKi SeokHuhKim, DonghyunDonghyunKimMitard, JeromeJeromeMitardHan, Cheol E.Cheol E.HanLee, Jae WooJae WooLee2023-04-252023-01-142023-04-2520232640-4567WOS:000900269100001https://imec-publications.be/handle/20.500.12860/40978Automatic Prediction of Metal-Oxide-Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning AlgorithmJournal article10.1002/aisy.202200302WOS:000900269100001CHANNEL-LENGTHRATIO METHODEXTRACTIONINSTABILITYDEFINITIONBIAS