Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels

Degraeve, RobinRobinDegraeveClima, SergiuSergiuClimaPutcha, VamsiVamsiPutchaKaczer, BenBenKaczerRoussel, PhilippePhilippeRousselLinten, DimitriDimitriLintenGroeseneken, GuidoGuidoGroesenekenArreghini, AntonioAntonioArreghiniKarner, MarkusMarkusKarnerKernstock, ChristianChristianKernstockStanojevic, ZlatanZlatanStanojevicVan den Bosch, GeertGeertVan den BoschVan Houdt, JanJanVan HoudtFurnemont, ArnaudArnaudFurnemontThean, AaronAaronThean2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25170Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channelsProceedings paper