Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology

Veloso, AnabelaAnabelaVelosoChew, Soon AikSoon AikChewHiguchi, YuichiYuichiHiguchiRagnarsson, Lars-AkeLars-AkeRagnarssonSimoen, EddyEddySimoenSchram, TomTomSchramWitters, ThomasThomasWittersVan Ammel, AnnemieAnnemieVan AmmelDekkers, HaroldHaroldDekkersTielens, HildeHildeTielensDevriendt, KatiaKatiaDevriendtHeylen, NancyNancyHeylenSebaai, FaridFaridSebaaiBrus, StephanStephanBrusFavia, PaolaPaolaFaviaGeypen, JefJefGeypenBender, HugoHugoBenderPhatak, AnupAnupPhatakChen, M. S.M. S.ChenLu, X.X.LuGanguli, S.S.GanguliLei, Y.Y.LeiTang, W.W.TangFu, X.X.FuGandikota, S.S.GandikotaNoori, A.A.NooriBrand, A.A.BrandYoshida, N.N.YoshidaThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchi2021-10-202021-10-202012-09https://imec-publications.be/handle/20.500.12860/21764Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technologyProceedings paper