Influence of the Ge-concentration and RTA on the device performance of strained Si/SiGe pMOS devices

Collaert, NadineNadineCollaertVerheyen, PeterPeterVerheyenDe Meyer, KristinKristinDe MeyerLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6126Influence of the Ge-concentration and RTA on the device performance of strained Si/SiGe pMOS devicesProceedings paper