Improving post-cycling low resistance state retention in resistive RAM with combined oxygen vacancy and copper filament

Radhakrishnan, JanakiJanakiRadhakrishnanBelmonte, AttilioAttilioBelmonteClima, SergiuSergiuClimaRedolfi, AugustoAugustoRedolfiHoussa, MichelMichelHoussaKar, Gouri SankarGouri SankarKarGoux, LudovicLudovicGoux2021-10-272021-10-2720190741-3106https://imec-publications.be/handle/20.500.12860/33846Improving post-cycling low resistance state retention in resistive RAM with combined oxygen vacancy and copper filamentJournal articlehttps://ieeexplore.ieee.org/document/8717729