Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates

Kobayashi, DaisukeDaisukeKobayashiSimoen, EddyEddySimoenPut, SofieSofiePutGriffoni, AlessioAlessioGriffoniPoizat, MarcMarcPoizatHirose, KazuyukiKazuyukiHiroseClaeys, CorCorClaeys2021-10-192021-10-1920110018-9499https://imec-publications.be/handle/20.500.12860/19187Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substratesJournal articlehttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5720535