Implications of side contact depth on the Schottky barrier of 2D field-effect transistors

Panarella, LucaLucaPanarellaSmets, QuentinQuentinSmetsVerreck, DevinDevinVerreckKaczer, BenBenKaczerTyaginov, StanislavStanislavTyaginovLockhart de la Rosa, Cesar JavierCesar JavierLockhart de la RosaKar, Gouri SankarGouri SankarKarAfanasiev, ValeriValeriAfanasiev2025-02-102025-01-092025-02-1020251569-8025WOS:001389225700001https://imec-publications.be/handle/20.500.12860/45055Implications of side contact depth on the Schottky barrier of 2D field-effect transistorsJournal article10.1007/s10825-024-02262-6WOS:001389225700001