Delie, GillesGillesDelieLitwin, Peter M. M.Peter M. M.LitwinAbad, Gaby C. C.Gaby C. C.AbadMcDonnell, Stephen J. J.Stephen J. J.McDonnellChiappe, DanieleDanieleChiappeAfanasiev, Valeri V. V.Valeri V. V.Afanasiev2022-11-172022-10-172022-11-1720220734-2101WOS:000862852300004https://imec-publications.be/handle/20.500.12860/40586Variability of band alignment between WS2 and SiO2: Intrinsic versus extrinsic contributionsJournal article10.1116/6.0001987WOS:000862852300004MOS2 TRANSISTORSMONOLAYER MOS2MOBILITY