Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance

Marcon, DenisDenisMarconViaene, JohnJohnViaeneStoffels, SteveSteveStoffelsVanaverbeke, FreFreVanaverbekeKang, XuanwuXuanwuKangLenci, SilviaSilviaLenciSrivastava, PuneetPuneetSrivastavaDecoutere, StefaanStefaanDecoutere2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21095Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performanceMeeting abstract