Oxide trapping in InGaAs-Al2O3 system and the role of sulfur in reducing the Al2O3 trap density

Alian, AliRezaAliRezaAlianBrammertz, GuyGuyBrammertzDegraeve, RobinRobinDegraeveCho, Moon JuMoon JuChoMerckling, ClementClementMercklingLin, DennisDennisLinWang, Wei-EWei-EWangCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisDe Meyer, KristinKristinDe MeyerHeyns, MarcMarcHeyns2021-10-202021-10-2020120741-3106https://imec-publications.be/handle/20.500.12860/20278Oxide trapping in InGaAs-Al2O3 system and the role of sulfur in reducing the Al2O3 trap densityJournal article