Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices

Vohra, AnuragAnuragVohraPorret, ClémentClémentPorretKohen, DavidDavidKohenFolkersma, StevenStevenFolkersmaBogdanowicz, JanuszJanuszBogdanowiczSchaekers, MarcMarcSchaekersTolle, JohnJohnTolleHikavyy, AndriyAndriyHikavyyCapogreco, ElenaElenaCapogrecoWitters, LiesbethLiesbethWittersLanger, RobertRobertLangerVandervorst, WilfriedWilfriedVandervorstLoo, RogerRogerLoo2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/32221Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devicesProceedings paper