Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation

Lee, KookjinKookjinLeeNam, SangjinSangjinNamJi, HyunjinHyunjinJiChoi, JunheeJunheeChoiJin, Jun-EonJun-EonJinKim, YeonsuYeonsuKimNa, JunhongJunhongNaRyu, Min-YeulMin-YeulRyuCho, Young-HoonYoung-HoonChoLee, HyebinHyebinLeeLee, JaewooJaewooLeeJoo, Min-KyuMin-KyuJooKim, Gyu-TaeGyu-TaeKim2022-02-232022-02-2320212397-7132WOS:000607110700004https://imec-publications.be/handle/20.500.12860/39051Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuationJournal article10.1038/s41699-020-00186-wWOS:000607110700004FIELD-EFFECT TRANSISTORSHIDDEN MARKOV MODELLOW-FREQUENCY NOISE1/F NOISEGRAPHENEMICROSTRUCTURESSTATES