Germanium deep-submicron pFET and nFET devices with etched TaN metal gate and high-k dielectric, fabricated on germanium-on-insulator substrates

Meuris, MarcMarcMeurisDe Jaeger, BriceBriceDe JaegerVan Steenbergen, JanJanVan SteenbergenLetertre, FabriceFabriceLetertreRaskin, GeoffroyGeoffroyRaskinBillon, ThierryThierryBillonHeyns, MarcMarcHeyns2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10888Germanium deep-submicron pFET and nFET devices with etched TaN metal gate and high-k dielectric, fabricated on germanium-on-insulator substratesOral presentation