Impact of etch stop layer on negative bias illumination stress of amorphous indium gallium zinc oxide transistors

Bhoolokam, AjayAjayBhoolokamNag, ManojManojNagVaisman Chasin, AdrianAdrianVaisman ChasinSteudel, SoerenSoerenSteudelGenoe, JanJanGenoeGelinck, GerwinGerwinGelinckGroeseneken, GuidoGuidoGroesenekenHeremans, PaulPaulHeremans2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/23550Impact of etch stop layer on negative bias illumination stress of amorphous indium gallium zinc oxide transistorsProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948820