Trap density in Ge-on-Si pMOSFETs with Si intermediate layers

Fobelets, KristelKristelFobeletsRumyantsev, SergeySergeyRumyantsevShur, MichaelMichaelShurVincent, BenjaminBenjaminVincentMitard, JeromeJeromeMitardDe Jaeger, BriceBriceDe JaegerHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-192021-10-192011-06https://imec-publications.be/handle/20.500.12860/18918Trap density in Ge-on-Si pMOSFETs with Si intermediate layersProceedings paper