Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer

Delhougne, RomainRomainDelhougneMeunier-Beillard, PhilippePhilippeMeunier-BeillardCaymax, MattyMattyCaymaxLoo, RogerRogerLooVandervorst, WilfriedWilfriedVandervorst2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8831Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layerJournal article