Avoiding loading effects and facet growth: key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devices

Loo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-152021-10-152003-01https://imec-publications.be/handle/20.500.12860/7817Avoiding loading effects and facet growth: key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devicesMeeting abstract