Selective etch of Si and SiGe for gate-all-around device architecture

Wostyn, KurtKurtWostynSebaai, FaridFaridSebaaiRip, JensJensRipMertens, HansHansMertensWitters, LiesbethLiesbethWittersLoo, RogerRogerLooHikavyy, AndriyAndriyHikavyyMilenin, AlexeyAlexeyMileninHoriguchi, NaotoNaotoHoriguchiCollaert, NadineNadineCollaertThean, AaronAaronTheanMertens, PaulPaulMertensDe Gendt, StefanStefanDe GendtHolsteyns, FrankFrankHolsteyns2021-10-232021-10-232015-10https://imec-publications.be/handle/20.500.12860/26186Selective etch of Si and SiGe for gate-all-around device architectureProceedings paper10.1149/06908.0147ecst