Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

Carter, RichardRichardCarterCartier, EduardEduardCartierKerber, AndreasAndreasKerberPantisano, LuigiLuigiPantisanoSchram, TomTomSchramDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7286Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacksJournal article