In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor

Clerix, Jan-WillemJan-WillemClerixDianat, GolnazGolnazDianatDelabie, AnneliesAnneliesDelabieParsons, Gregory N.Gregory N.Parsons2023-12-122023-05-052023-07-042023-12-1220230734-2101WOS:000967842100001https://imec-publications.be/handle/20.500.12860/41569In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitorJournal article10.1116/6.0002493WOS:000967842100001SELF-LIMITING FLUORINATIONAREA-SELECTIVE DEPOSITIONCHEMICAL-VAPOR-DEPOSITIONTHIN-FILMSTRIMETHYLALUMINUMSILICONCHEMISORPTIONPASSIVATIONOXIDEFTIR