Strained Si/SiGe MOS technology: improving gate dielectric integrity

Olsen, S.H.S.H.OlsenYan, L.L.YanAgaiby, R.R.AgaibyEscobedo-Cousin, A.G.A.G.Escobedo-CousinO'Neil, A.G.A.G.O'NeilHellstrom, P.E.P.E.HellstromOstling, M.M.OstlingLyutovich, K.K.LyutovichKasper, E.E.KasperClaeys, CorCorClaeysParker, E.H.C.E.H.C.Parker2021-10-182021-10-1820090167-9317https://imec-publications.be/handle/20.500.12860/15942Strained Si/SiGe MOS technology: improving gate dielectric integrityJournal article