Caymax, MattyMattyCaymaxLeys, FrederikFrederikLeysMitard, JeromeJeromeMitardMartens, KoenKoenMartensYang, LijungLijungYangPourtois, GeoffreyGeoffreyPourtoisVandervorst, WilfriedWilfriedVandervorstMeuris, MarcMarcMeurisLoo, RogerRogerLoo2021-10-172021-10-172009-05https://imec-publications.be/handle/20.500.12860/15072The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETsProceedings paper