Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

Poyai, A.A.PoyaiRittaporn, I.I.RittapornSimoen, EddyEddySimoenClaeys, CorCorClaeysRooyackers, RitaRitaRooyackers2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9462Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodesJournal article