Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

Takeuchi, ShotaroShotaroTakeuchiShimura, YosukeYosukeShimuraNakatsuka, OsamuOsamuNakatsukaZaima, ShigeakiShigeakiZaimaOgawa, MasakiMasakiOgawaSakai, AkiraAkiraSakai2021-10-172021-10-1720080003-6951https://imec-publications.be/handle/20.500.12860/14536Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded methodJournal articlehttp://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000092000023231916000001&idtype=cvips&gifs=yes