High performance Si0.45Ge0.55 implant free quantum well pFET with enhanced mobility by low temperature process and transverse strain relaxation

Yamaguchi, ShimpeiShimpeiYamaguchiWitters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardEneman, GeertGeertEnemanHellings, GeertGeertHellingsHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooHoriguchi, NaotoNaotoHoriguchi2021-10-222021-10-222014-120018-9383https://imec-publications.be/handle/20.500.12860/24857High performance Si0.45Ge0.55 implant free quantum well pFET with enhanced mobility by low temperature process and transverse strain relaxationJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6951372