Velocity and mobility investigation in 1nm-EOT HfSiON on Si-(110) and (100)

Trojman, LionelLionelTrojmanPantisano, LuigiLuigiPantisanoDehan, MorinMorinDehanFerain, IsabelleIsabelleFerainSeveri, SimoneSimoneSeveriMaes, HermanHermanMaesGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-1820090018-9383https://imec-publications.be/handle/20.500.12860/16324Velocity and mobility investigation in 1nm-EOT HfSiON on Si-(110) and (100) – does the dielectric quality matter?Journal article