Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current

Varanasi, AnirudhAnirudhVaranasiDegraeve, RobinRobinDegraeveRoussel, PhilippePhilippeRousselVici, AndreaAndreaViciMerckling, ClementClementMerckling2024-09-192024-08-162024-09-192024979-8-3503-6977-91541-7026WOS:001229691100023https://imec-publications.be/handle/20.500.12860/44319Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage currentProceedings paper10.1109/IRPS48228.2024.10529341979-8-3503-6976-2WOS:001229691100023