Toledano Luque, MariaMariaToledano LuqueKaczer, BenBenKaczerRoussel, PhilippePhilippeRousselDegraeve, RobinRobinDegraeveFranco, JacopoJacopoFrancoKauerauf, ThomasThomasKaueraufGrasser, TiborTiborGrasserGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/18093Vertical localization of trapped holes in SiON pMOSFETs after positive and negative gate stressProceedings paper