Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology

Griffoni, AlessioAlessioGriffoniChen, Shih-HungShih-HungChenThijs, StevenStevenThijsLinten, DimitriDimitriLintenScholz, MirkoMirkoScholzGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17189Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technologyProceedings paper