Comparison between 0.13 μm partially depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K

Pavanello, M.A.M.A.PavanelloMartino, J.J.MartinoMercha, AbdelkarimAbdelkarimMerchaRafi, Joan MarcJoan MarcRafiSimoen, EddyEddySimoenClaeys, CorCorClaeysvan Meer, HansHansvan MeerDe Meyer, KristinKristinDe Meyer2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6703Comparison between 0.13 μm partially depleted silicon-on-insulator technology with floating body operation at 300 K and 90 KProceedings paper