Hafnium oxide films by atomic layer deposition for high-k gate dielectric applications: analysis of the density of nanometer-thin films

Puurunen, RiikkaRiikkaPuurunenDelabie, AnneliesAnneliesDelabieVan Elshocht, SvenSvenVan ElshochtCaymax, MattyMattyCaymaxGreen, MartinMartinGreenBrijs, BertBertBrijsRichard, OlivierOlivierRichardBender, HugoHugoBenderConard, ThierryThierryConardHoflijk, IlseIlseHoflijkVandervorst, WilfriedWilfriedVandervorstHellin, DavidDavidHellinVanhaeren, DanielleDanielleVanhaerenZhao, ChaoChaoZhaoDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11066Hafnium oxide films by atomic layer deposition for high-k gate dielectric applications: analysis of the density of nanometer-thin filmsJournal article