Reep, TomTomReepDe Bruyn, KieranKieranDe BruynWu, Cheng-HanCheng-HanWuJans, JasperJasperJansVan Kerrebrouck, JorisJorisVan KerrebrouckHuang, YishuYishuHuangGuo, YujieYujieGuoYudistira, DiditDiditYudistiraBrems, StevenStevenBremsAsselberghs, IngeIngeAsselberghsVan Campenhout, JorisJorisVan CampenhoutKuyken, BartBartKuykenOssieur, PeterPeterOssieurBauwelinck, JohanJohanBauwelinckVan Thourhout, DriesDriesVan Thourhout2026-05-282026-05-2820262053-1583https://imec-publications.be/handle/20.500.12860/59457We demonstrate the first co-integration of a wafer-scale single-layer graphene electro-absorption modulator (EAM) with a high-speed SiGe bipolar CMOS (BiCMOS) electronic integrated circuit (EIC), achieving robust operation up to 25 GBd. The scalable graphene EAM, fabricated in a 300 mm CMOS pilot line, exhibits an intrinsic electro-optic (EO) bandwidth of 11.2 GHz. To overcome the RC-limitation and simultaneously enable low-voltage operation, the EIC was co-designed with a 30 Ω internal termination impedance and amplifies the voltage swing by a factor of 3. This optimization increased the effective EO bandwidth and allowed the co-integrated system to produce open eye diagrams at 25 GBd from a low input drive voltage. We report measured Q-factors and an estimated bit error rate of at 25 GBd using a 5-tap feed-forward equalizer. This work demonstrates the first functional EO link co-integrating a graphene modulator with a BiCMOS electronic driver. By validating this wire-bonded interface, we establish a feasible and practical route towards energy-efficient, scalable photonic interconnects.engJournal article10.1088/2053-1583/ae4810WOS:001702090700001ELECTROABSORPTION MODULATOR