Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitates

Huging, NorbertNorbertHugingLuysberg, MartinaMartinaLuysbergUrban, KnutKnutUrbanBuca, DanDanBucaHollander, BerndBerndHollanderMantl, SiegfriedSiegfriedMantlMorschbacher, MarcioMarcioMorschbacherFichtner, PauloPauloFichtnerLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10624Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitatesProceedings paper